| PART |
Description |
Maker |
| FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FRM5J141GT |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| FRM5N143DS |
InGaAs-APD/Preamp Receiver
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| FRM3Z232BS FRM3Z232BS-A |
InGaAs-PIN/Preamp Preamp
|
Eudyna Devices Inc
|
| AT3SGCCJ57 AT3SGCCJ59 AT3SGCCJ34 AT3SGCCJ28 AT3SGC |
2.5Gb/s High Sensitivity coplanar APD preamp receiver
|
Bookham, Inc.
|
| C30659-900-R8A C30659 C30659-1060-3A C30659-1060-R |
Silicon and InGaAs APD Preamplifier Modules
|
PerkinElmer Optoelectro...
PERKINELMER[PerkinElmer Optoelectronics]
|
| FRM3Z621LT FRM3Z621KT |
InGaAs-PIN/Preamp Receiver
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| G12072-54-15 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
| FRM5J141GW |
InGaAs-PIN/Preamp Receiver
|
Eudyna Devices Inc
|
| C4777-01 |
APD module APD module integrated with peripheral circuits
|
Hamamatsu Corporation
|
| NR8360JP-BC |
30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
California Eastern Laboratories
|
| NR4510UR NR4510UR-AZ |
NECs 050 um InGaAs APD ROSA WITH INTERNAL PRE-AMPLIFIER FOR 2.5 GB/S APPLICATIONS
|
California Eastern Labs
|
